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Infineon TechnologiesTO-263-3, D²Pak (2 Leads + Tab), TO-263ABRoHS

IRFS3607TRLPBF

MOSFET N-CH 75V 80A D2PAK

IRFS3607TRLPBF by Infineon Technologies
Subcategory

Transistors Fets Mosfets Single

Package

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Series

HEXFET®

Status

Active

Datasheet

View Datasheet ↗

$1.57 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandInfineon Technologies
ModelIRFS3607TRLPBF
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)75 V
Rds On (Max)9mOhm @ 46A, 10V
Vgs(th) (Max)4V @ 100µA
Gate Charge (Qg)84 nC @ 10 V
Input Capacitance (Ciss)3070 pF @ 50 V
Power Dissipation (Max)140W (Tc)
Drive Voltage10V
Supplier Device PackageD2PAK
RoHSRoHS
Part StatusActive

Application & Notes

IRFS3607TRLPBF by Infineon Technologies is an N-channel power MOSFET rated at 75 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 9mOhm @ 46A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

📖 Technical Guides for IRFS3607TRLPBF

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Power Discrete Alternatives Guide: MOSFET, IGBT, SiC, GaN Cross-Reference

Components Guide

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 100µA
Rds On (Max) @ Id, Vgs9mOhm @ 46A, 10V
Power Dissipation (Max)140W (Tc)
Gate Charge (Qg) (Max) @ Vgs84 nC @ 10 V
Drain to Source Voltage (Vdss)75 V
Input Capacitance (Ciss) (Max) @ Vds3070 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C80A (Tc)

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