PC
CategoriesBrandsBOMBlogAbout
Vishay SiliconixTO-263-3, D²Pak (2 Leads + Tab), TO-263ABRoHS

IRFS11N50APBF

MOSFET N-CH 500V 11A D2PAK

IRFS11N50APBF by Vishay Siliconix
Subcategory

Transistors Fets Mosfets Single

Package

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Status

Active

Datasheet

View Datasheet ↗

$3.08 / unit (market reference)

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

✅ 365-Day Warranty🚚 Global Shipping

Parameters

ParameterValue
BrandVishay Siliconix
ModelIRFS11N50APBF
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)500 V
Rds On (Max)520mOhm @ 6.6A, 10V
Vgs(th) (Max)4V @ 250µA
Gate Charge (Qg)52 nC @ 10 V
Input Capacitance (Ciss)1423 pF @ 25 V
Power Dissipation (Max)170W (Tc)
Drive Voltage10V
Supplier Device PackageD²PAK (TO-263)
RoHSRoHS
Part StatusActive

Application & Notes

IRFS11N50APBF by Vishay Siliconix is an N-channel power MOSFET rated at 500 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 520mOhm @ 6.6A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

📖 Technical Guides for IRFS11N50APBF

📄

MOSFET Alternatives: IRFZ44N, AO3400, IRF4905 & More — Cross Reference Guide

Components Guide

📄

Power Discrete Alternatives Guide: MOSFET, IGBT, SiC, GaN Cross-Reference

Components Guide

Alternatives & Replacements

View All →
onsemiStockTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

FDB8442-F085

MOSFET N-CH 40V 28A TO263AB

Request QuoteRFQ →
onsemiStockTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

NTB90N02T4

MOSFET N-CH 24V 90A D2PAK

Request QuoteRFQ →
Infineon TechnologiesStockTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPB65R225C7ATMA1

MOSFET N-CH 650V 11A D2PAK

Request QuoteRFQ →
Rochester Electronics, LLCStockTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

FDB6035AL

N-CHANNEL POWER MOSFET

Request QuoteRFQ →
Rochester Electronics, LLCStockTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

AUIRF3710ZSTRR

MOSFET N-CH 100V 59A D2PAK

Request QuoteRFQ →
Infineon TechnologiesStockTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SPB80N03S2L-05

MOSFET N-CH 30V 80A TO263-3

Request QuoteRFQ →

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250µA
Rds On (Max) @ Id, Vgs520mOhm @ 6.6A, 10V
Power Dissipation (Max)170W (Tc)
Gate Charge (Qg) (Max) @ Vgs52 nC @ 10 V
Drain to Source Voltage (Vdss)500 V
Input Capacitance (Ciss) (Max) @ Vds1423 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C11A (Tc)

Request a Quote

Submit your quantity and details — we will reply within 24 hours.