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Infineon TechnologiesTO-261-4, TO-261AARoHS

IRFL4105TRPBF

MOSFET N-CH 55V 3.7A SOT223

IRFL4105TRPBF by Infineon Technologies
Subcategory

Transistors Fets Mosfets Single

Package

TO-261-4, TO-261AA

Series

HEXFET®

Status

Active

$1.00 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandInfineon Technologies
ModelIRFL4105TRPBF
Package / CaseTO-261-4, TO-261AA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)55 V
Rds On (Max)45mOhm @ 3.7A, 10V
Vgs(th) (Max)4V @ 250µA
Gate Charge (Qg)35 nC @ 10 V
Input Capacitance (Ciss)660 pF @ 25 V
Power Dissipation (Max)1W (Ta)
Drive Voltage10V
Supplier Device PackageSOT-223
RoHSRoHS
Part StatusActive

Application & Notes

IRFL4105TRPBF by Infineon Technologies is an N-channel power MOSFET rated at 55 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-261-4, TO-261AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 45mOhm @ 3.7A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250µA
Rds On (Max) @ Id, Vgs45mOhm @ 3.7A, 10V
Power Dissipation (Max)1W (Ta)
Gate Charge (Qg) (Max) @ Vgs35 nC @ 10 V
Drain to Source Voltage (Vdss)55 V
Input Capacitance (Ciss) (Max) @ Vds660 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C3.7A (Ta)

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