IRFHS8242TRPBF
MOSFET N-CH 25V 9.9A/21A 6PQFN
Transistors Fets Mosfets Single
6-PowerVDFN
HEXFET®
Active
$0.56 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | IRFHS8242TRPBF |
| Package / Case | 6-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 25 V |
| Rds On (Max) | 13mOhm @ 8.5A, 10V |
| Vgs(th) (Max) | 2.35V @ 25µA |
| Gate Charge (Qg) | 10.4 nC @ 10 V |
| Input Capacitance (Ciss) | 653 pF @ 10 V |
| Power Dissipation (Max) | 2.1W (Ta) |
| Drive Voltage | 4.5V, 10V |
| Supplier Device Package | 6-PQFN (2x2) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IRFHS8242TRPBF by Infineon Technologies is an N-channel power MOSFET rated at 25 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-PowerVDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 13mOhm @ 8.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IRFHS8242TRPBF
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 8.5A, 10V |
| Power Dissipation (Max) | 2.1W (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 10.4 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 25 V |
| Input Capacitance (Ciss) (Max) @ Vds | 653 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 9.9A (Ta), 21A (Tc) |
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