PC
Rochester Electronics, LLCTO-220-3RoHS

IRF9630

MOSFET P-CH 200V 6.5A TO220AB

IRF9630 by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Single

Package

TO-220-3

Status

Obsolete

$1.31 / unit (market reference)

MOQ: 229 pcs

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Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelIRF9630
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeP-Channel
Drain to Source Voltage (Vdss)200 V
Rds On (Max)800mOhm @ 3.9A, 10V
Vgs(th) (Max)4V @ 250µA
Gate Charge (Qg)29 nC @ 10 V
Input Capacitance (Ciss)700 pF @ 25 V
Power Dissipation (Max)74W (Tc)
Drive Voltage10V
Supplier Device PackageTO-220AB
RoHSRoHS
Part StatusObsolete

Application & Notes

IRF9630 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 200 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 800mOhm @ 3.9A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeP-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250µA
Rds On (Max) @ Id, Vgs800mOhm @ 3.9A, 10V
Power Dissipation (Max)74W (Tc)
Gate Charge (Qg) (Max) @ Vgs29 nC @ 10 V
Drain to Source Voltage (Vdss)200 V
Input Capacitance (Ciss) (Max) @ Vds700 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C6.5A (Tc)

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