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Rochester Electronics, LLC8-SOIC (0.154", 3.90mm Width)RoHS

IRF7902TRPBF

HEXFET POWER MOSFET

IRF7902TRPBF by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Arrays

Package

8-SOIC (0.154", 3.90mm Width)

Series

HEXFET®

Status

Active

Datasheet

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$0.28 / unit (market reference)

MOQ: 789 pcs

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Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelIRF7902TRPBF
Package / Case8-SOIC (0.154", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET Type2 N-Channel (Dual)
Drain to Source Voltage (Vdss)30V
Rds On (Max)22.6mOhm @ 6.4A, 10V, 14.4mOhm @ 9.7A, 10V
Vgs(th) (Max)2.25V @ 25µA
Gate Charge (Qg)6.9nC @ 4.5V, 9.8nC @ 4.5V
Input Capacitance (Ciss)580pF @ 15V, 900pF @ 15V
Power Dissipation (Max)1.4W (Ta), 2W (Ta)
Supplier Device Package8-SO
RoHSRoHS
Part StatusActive

Application & Notes

IRF7902TRPBF by Rochester Electronics, LLC is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SOIC (0.154", 3.90mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 22.6mOhm @ 6.4A, 10V, 14.4mOhm @ 9.7A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

📖 Technical Guides for IRF7902TRPBF

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MOSFET Alternatives: IRFZ44N, AO3400, IRF4905 & More — Cross Reference Guide

Components Guide

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Power Discrete Alternatives Guide: MOSFET, IGBT, SiC, GaN Cross-Reference

Components Guide

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All Technical Specifications

FET Type2 N-Channel (Dual)
Power - Max1.4W (Ta), 2W (Ta)
Vgs(th) (Max) @ Id2.25V @ 25µA
Rds On (Max) @ Id, Vgs22.6mOhm @ 6.4A, 10V, 14.4mOhm @ 9.7A, 10V
Gate Charge (Qg) (Max) @ Vgs6.9nC @ 4.5V, 9.8nC @ 4.5V
Drain to Source Voltage (Vdss)30V
Input Capacitance (Ciss) (Max) @ Vds580pF @ 15V, 900pF @ 15V
Current - Continuous Drain (Id) @ 25°C6.4A (Ta), 9.7A (Ta)

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