PC
Infineon Technologies8-TSSOP (0.173", 4.40mm Width)RoHS

IRF7700GTRPBF

MOSFET P-CH 20V 8.6A 8TSSOP

IRF7700GTRPBF by Infineon Technologies
Subcategory

Transistors Fets Mosfets Single

Package

8-TSSOP (0.173", 4.40mm Width)

Series

HEXFET®

Status

Obsolete

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandInfineon Technologies
ModelIRF7700GTRPBF
Package / Case8-TSSOP (0.173", 4.40mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeP-Channel
Drain to Source Voltage (Vdss)20 V
Rds On (Max)15mOhm @ 8.6A, 4.5V
Vgs(th) (Max)1.2V @ 250µA
Gate Charge (Qg)89 nC @ 5 V
Input Capacitance (Ciss)4300 pF @ 15 V
Power Dissipation (Max)1.5W (Ta)
Drive Voltage2.5V, 4.5V
Supplier Device Package8-TSSOP
RoHSRoHS
Part StatusObsolete

Application & Notes

IRF7700GTRPBF by Infineon Technologies is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-TSSOP (0.173", 4.40mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 15mOhm @ 8.6A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeP-Channel
Vgs (Max)±12V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.2V @ 250µA
Rds On (Max) @ Id, Vgs15mOhm @ 8.6A, 4.5V
Power Dissipation (Max)1.5W (Ta)
Gate Charge (Qg) (Max) @ Vgs89 nC @ 5 V
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds4300 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C8.6A (Ta)

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