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Rochester Electronics, LLC8-TSSOP (0.173", 4.40mm Width)RoHS

FDW6923

MOSFET P-CH 20V 3.5A 8TSSOP

Subcategory

Transistors Fets Mosfets Single

Package

8-TSSOP (0.173", 4.40mm Width)

Series

PowerTrench®

Status

Obsolete

$1.28 / unit (market reference)

MOQ: 235 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelFDW6923
Package / Case8-TSSOP (0.173", 4.40mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeP-Channel
Drain to Source Voltage (Vdss)20 V
Rds On (Max)45mOhm @ 3.5A, 4.5V
Vgs(th) (Max)1.5V @ 250µA
Gate Charge (Qg)16 nC @ 4.5 V
Input Capacitance (Ciss)1030 pF @ 10 V
Power Dissipation (Max)1.2W (Ta)
Drive Voltage2.5V, 4.5V
Supplier Device Package8-TSSOP
RoHSRoHS
Part StatusObsolete

Application & Notes

FDW6923 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-TSSOP (0.173", 4.40mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 45mOhm @ 3.5A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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FDW262PRochester Electronics, LLC

MOSFET P-CH 20V 4.5A 8TSSOP

All Technical Specifications

FET TypeP-Channel
Vgs (Max)±12V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.5V @ 250µA
Rds On (Max) @ Id, Vgs45mOhm @ 3.5A, 4.5V
Power Dissipation (Max)1.2W (Ta)
Gate Charge (Qg) (Max) @ Vgs16 nC @ 4.5 V
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds1030 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C3.5A (Ta)

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