IPP60R520C6XKSA1
MOSFET N-CH 600V 8.1A TO220-3
Transistors Fets Mosfets Single
TO-220-3
CoolMOS™
Obsolete
$0.64 / unit (market reference)
MOQ: 469 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | IPP60R520C6XKSA1 |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 600 V |
| Rds On (Max) | 520mOhm @ 2.8A, 10V |
| Vgs(th) (Max) | 3.5V @ 230µA |
| Gate Charge (Qg) | 23.4 nC @ 10 V |
| Input Capacitance (Ciss) | 512 pF @ 100 V |
| Power Dissipation (Max) | 66W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | PG-TO220-3 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
IPP60R520C6XKSA1 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 600 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 520mOhm @ 2.8A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IPP60R520C6XKSA1
Alternatives & Replacements
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N-CHANNEL POWER MOSFET
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FDP7045L
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3.5V @ 230µA |
| Rds On (Max) @ Id, Vgs | 520mOhm @ 2.8A, 10V |
| Power Dissipation (Max) | 66W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 23.4 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 512 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 8.1A (Tc) |
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