IPN60R360P7SATMA1
MOSFET N-CHANNEL 600V 9A SOT223
Transistors Fets Mosfets Single
TO-261-4, TO-261AA
CoolMOS™ P7
Active
$1.15 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | IPN60R360P7SATMA1 |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 600 V |
| Rds On (Max) | 360mOhm @ 2.7A, 10V |
| Vgs(th) (Max) | 4V @ 140µA |
| Gate Charge (Qg) | 13 nC @ 10 V |
| Input Capacitance (Ciss) | 555 pF @ 400 V |
| Power Dissipation (Max) | 7W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | PG-SOT223 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IPN60R360P7SATMA1 by Infineon Technologies is an N-channel power MOSFET rated at 600 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-261-4, TO-261AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 360mOhm @ 2.7A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IPN60R360P7SATMA1
Alternatives & Replacements
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MOSFET N-CH 600V 120MA SOT223-4
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 140µA |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 2.7A, 10V |
| Power Dissipation (Max) | 7W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 555 pF @ 400 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
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