IPI60R099CPAAKSA1
MOSFET N-CH 600V 31A TO262-3
Transistors Fets Mosfets Single
TO-262-3 Long Leads, I²Pak, TO-262AA
CoolMOS™
Last Time Buy
$4.28 / unit (market reference)
MOQ: 71 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | IPI60R099CPAAKSA1 |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 600 V |
| Rds On (Max) | 105mOhm @ 18A, 10V |
| Vgs(th) (Max) | 3.5V @ 1.2mA |
| Gate Charge (Qg) | 80 nC @ 10 V |
| Input Capacitance (Ciss) | 2800 pF @ 100 V |
| Power Dissipation (Max) | 255W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | PG-TO262-3 |
| RoHS | RoHS |
| Part Status | Last Time Buy |
Application & Notes
IPI60R099CPAAKSA1 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 600 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-262-3 Long Leads, I²Pak, TO-262AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 105mOhm @ 18A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IPI60R099CPAAKSA1
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3.5V @ 1.2mA |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 18A, 10V |
| Power Dissipation (Max) | 255W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
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