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Rochester Electronics, LLCTO-262-3 Long Leads, I²Pak, TO-262AARoHS

IPI45N06S409AKSA2

MOSFET N-CH 60V 45A TO262-3

Subcategory

Transistors Fets Mosfets Single

Package

TO-262-3 Long Leads, I²Pak, TO-262AA

Series

Automotive, AEC-Q101, OptiMOS™

Status

Active

$0.67 / unit (market reference)

MOQ: 447 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelIPI45N06S409AKSA2
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)60 V
Rds On (Max)9.4mOhm @ 45A, 10V
Vgs(th) (Max)4V @ 34µA
Gate Charge (Qg)47 nC @ 10 V
Input Capacitance (Ciss)3785 pF @ 25 V
Power Dissipation (Max)71W (Tc)
Drive Voltage10V
Supplier Device PackagePG-TO262-3-1
RoHSRoHS
Part StatusActive

Application & Notes

IPI45N06S409AKSA2 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-262-3 Long Leads, I²Pak, TO-262AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 9.4mOhm @ 45A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 34µA
Rds On (Max) @ Id, Vgs9.4mOhm @ 45A, 10V
Power Dissipation (Max)71W (Tc)
Gate Charge (Qg) (Max) @ Vgs47 nC @ 10 V
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds3785 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C45A (Tc)

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