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Infineon TechnologiesTO-263-3, D²Pak (2 Leads + Tab), TO-263ABRoHS

IPB65R310CFDAATMA1

MOSFET N-CH 650V 11.4A D2PAK

IPB65R310CFDAATMA1 by Infineon Technologies
Subcategory

Transistors Fets Mosfets Single

Package

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Series

Automotive, AEC-Q101, CoolMOS™

Status

Active

Datasheet

View Datasheet ↗

$2.08 / unit (market reference)

MOQ: 1000 pcs

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Parameters

ParameterValue
BrandInfineon Technologies
ModelIPB65R310CFDAATMA1
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)650 V
Rds On (Max)310mOhm @ 4.4A, 10V
Vgs(th) (Max)4.5V @ 440µA
Gate Charge (Qg)41 nC @ 10 V
Input Capacitance (Ciss)1110 pF @ 100 V
Power Dissipation (Max)104.2W (Tc)
Drive Voltage10V
Supplier Device PackagePG-TO263-3
RoHSRoHS
Part StatusActive

Application & Notes

IPB65R310CFDAATMA1 by Infineon Technologies is an N-channel power MOSFET rated at 650 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 310mOhm @ 4.4A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

📖 Technical Guides for IPB65R310CFDAATMA1

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MOSFET Alternatives: IRFZ44N, AO3400, IRF4905 & More — Cross Reference Guide

Components Guide

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Power Discrete Alternatives Guide: MOSFET, IGBT, SiC, GaN Cross-Reference

Components Guide

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4.5V @ 440µA
Rds On (Max) @ Id, Vgs310mOhm @ 4.4A, 10V
Power Dissipation (Max)104.2W (Tc)
Gate Charge (Qg) (Max) @ Vgs41 nC @ 10 V
Drain to Source Voltage (Vdss)650 V
Input Capacitance (Ciss) (Max) @ Vds1110 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C11.4A (Tc)

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