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Infineon TechnologiesTO-263-3, D²Pak (2 Leads + Tab), TO-263ABRoHS

IPB120N03S4L03ATMA1

MOSFET N-CH 30V 120A D2PAK

IPB120N03S4L03ATMA1 by Infineon Technologies
Subcategory

Transistors Fets Mosfets Single

Package

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Series

Automotive, AEC-Q101, OptiMOS™

Status

Not For New Designs

Datasheet

View Datasheet ↗

$0.74 / unit (market reference)

MOQ: 404 pcs

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Parameters

ParameterValue
BrandInfineon Technologies
ModelIPB120N03S4L03ATMA1
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)30 V
Rds On (Max)3mOhm @ 100A, 10V
Vgs(th) (Max)2.2V @ 40µA
Gate Charge (Qg)72 nC @ 10 V
Input Capacitance (Ciss)5300 pF @ 25 V
Power Dissipation (Max)79W (Tc)
Drive Voltage4.5V, 10V
Supplier Device PackagePG-TO263-3
RoHSRoHS
Part StatusNot For New Designs

Application & Notes

IPB120N03S4L03ATMA1 by Infineon Technologies is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 3mOhm @ 100A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

📖 Technical Guides for IPB120N03S4L03ATMA1

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MOSFET Alternatives: IRFZ44N, AO3400, IRF4905 & More — Cross Reference Guide

Components Guide

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Power Discrete Alternatives Guide: MOSFET, IGBT, SiC, GaN Cross-Reference

Components Guide

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±16V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.2V @ 40µA
Rds On (Max) @ Id, Vgs3mOhm @ 100A, 10V
Power Dissipation (Max)79W (Tc)
Gate Charge (Qg) (Max) @ Vgs72 nC @ 10 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds5300 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C120A (Tc)

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