PC
Infineon TechnologiesTO-263-3, D²Pak (2 Leads + Tab), TO-263ABRoHS

IPB049N06L3GATMA1

MOSFET N-CH 60V 80A D2PAK

IPB049N06L3GATMA1 by Infineon Technologies
Subcategory

Transistors Fets Mosfets Single

Package

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Series

OptiMOS™

Status

Obsolete

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandInfineon Technologies
ModelIPB049N06L3GATMA1
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)60 V
Rds On (Max)4.7mOhm @ 80A, 10V
Vgs(th) (Max)2.2V @ 58µA
Gate Charge (Qg)50 nC @ 4.5 V
Input Capacitance (Ciss)8400 pF @ 30 V
Power Dissipation (Max)115W (Tc)
Drive Voltage4.5V, 10V
Supplier Device PackagePG-TO263-3
RoHSRoHS
Part StatusObsolete

Application & Notes

IPB049N06L3GATMA1 by Infineon Technologies is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 4.7mOhm @ 80A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.2V @ 58µA
Rds On (Max) @ Id, Vgs4.7mOhm @ 80A, 10V
Power Dissipation (Max)115W (Tc)
Gate Charge (Qg) (Max) @ Vgs50 nC @ 4.5 V
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds8400 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C80A (Tc)

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