IMW65R039M1HXKSA1
SILICON CARBIDE MOSFET, PG-TO247
Transistors Fets Mosfets Single
TO-247-3
CoolSiC™
Active
$19.90 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | IMW65R039M1HXKSA1 |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 650 V |
| Rds On (Max) | 50mOhm @ 25A, 18V |
| Vgs(th) (Max) | 5.7V @ 7.5mA |
| Gate Charge (Qg) | 41 nC @ 18 V |
| Input Capacitance (Ciss) | 1393 pF @ 400 V |
| Power Dissipation (Max) | 176W (Tc) |
| Drive Voltage | 18V |
| Supplier Device Package | PG-TO247-3-41 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IMW65R039M1HXKSA1 by Infineon Technologies is an N-channel power MOSFET rated at 650 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 50mOhm @ 25A, 18V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IMW65R039M1HXKSA1
Alternatives & Replacements
View All →SPW11N60C3FKSA1
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POWER FIELD-EFFECT TRANSISTOR, N
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MOSFET N-CH 600V 52A TO247-3
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | +20V, -2V |
| Technology | SiCFET (Silicon Carbide) |
| Vgs(th) (Max) @ Id | 5.7V @ 7.5mA |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 25A, 18V |
| Power Dissipation (Max) | 176W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 18 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1393 pF @ 400 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Current - Continuous Drain (Id) @ 25°C | 46A (Tc) |
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