HUFA75852G3
MOSFET N-CH 150V 75A TO247-3
Transistors Fets Mosfets Single
TO-247-3
UltraFET™
Obsolete
$2.55 / unit (market reference)
MOQ: 118 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | HUFA75852G3 |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 150 V |
| Rds On (Max) | 16mOhm @ 75A, 10V |
| Vgs(th) (Max) | 4V @ 250µA |
| Gate Charge (Qg) | 480 nC @ 20 V |
| Input Capacitance (Ciss) | 7690 pF @ 25 V |
| Power Dissipation (Max) | 500W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | TO-247 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
HUFA75852G3 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 150 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 16mOhm @ 75A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for HUFA75852G3
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 75A, 10V |
| Power Dissipation (Max) | 500W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 480 nC @ 20 V |
| Drain to Source Voltage (Vdss) | 150 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7690 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
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