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Rochester Electronics, LLCTO-263-3, D²Pak (2 Leads + Tab), TO-263ABRoHS

HUF75332S3ST

MOSFET N-CH 55V 60A D2PAK

HUF75332S3ST by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Single

Package

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Series

UltraFET™

Status

Obsolete

Datasheet

View Datasheet ↗

$0.72 / unit (market reference)

MOQ: 348 pcs

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Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelHUF75332S3ST
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)55 V
Rds On (Max)19mOhm @ 60A, 10V
Vgs(th) (Max)4V @ 250µA
Gate Charge (Qg)85 nC @ 20 V
Input Capacitance (Ciss)1300 pF @ 25 V
Power Dissipation (Max)145W (Tc)
Drive Voltage10V
Supplier Device PackageD2PAK (TO-263)
RoHSRoHS
Part StatusObsolete

Application & Notes

HUF75332S3ST by Rochester Electronics, LLC is an N-channel power MOSFET rated at 55 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 19mOhm @ 60A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

📖 Technical Guides for HUF75332S3ST

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MOSFET Alternatives: IRFZ44N, AO3400, IRF4905 & More — Cross Reference Guide

Components Guide

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Power Discrete Alternatives Guide: MOSFET, IGBT, SiC, GaN Cross-Reference

Components Guide

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MOSFET N-CH 100V 59A D2PAK

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Infineon TechnologiesStockTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250µA
Rds On (Max) @ Id, Vgs19mOhm @ 60A, 10V
Power Dissipation (Max)145W (Tc)
Gate Charge (Qg) (Max) @ Vgs85 nC @ 20 V
Drain to Source Voltage (Vdss)55 V
Input Capacitance (Ciss) (Max) @ Vds1300 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C60A (Tc)

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