HSG1002VE-TL-E
RF 0.035A C BAND GERMANIUM NPN
Transistors Bipolar Bjt Rf
4-SMD, Gull Wing
Active
$0.39 / unit (market reference)
MOQ: 765 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | HSG1002VE-TL-E |
| Package / Case | 4-SMD, Gull Wing |
| Mounting Type | Surface Mount |
| Power Dissipation (Max) | 200mW |
| Supplier Device Package | 4-MFPAK |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
HSG1002VE-TL-E by Rochester Electronics, LLC is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 4-SMD, Gull Wing package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for HSG1002VE-TL-E
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All Technical Specifications
| Gain | 8dB ~ 19.5dB |
| Power - Max | 200mW |
| Transistor Type | NPN |
| Frequency - Transition | 38GHz |
| Noise Figure (dB Typ @ f) | 0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz |
| Current - Collector (Ic) (Max) | 35mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 5mA, 2V |
| Voltage - Collector Emitter Breakdown (Max) | 3.5V |
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