PC
Rohm Semiconductor8-PowerWDFNRoHS

HS8MA2TCR1

30V DUAL COMMON DRAIN PCH+NCH PO

Subcategory

Transistors Fets Mosfets Arrays

Package

8-PowerWDFN

Status

Active

$0.97 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandRohm Semiconductor
ModelHS8MA2TCR1
Package / Case8-PowerWDFN
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
FET TypeN and P-Channel
Drain to Source Voltage (Vdss)30V
Rds On (Max)80mOhm @ 5.5A, 10V, 35mOhm @ 7A, 10V
Vgs(th) (Max)2.5V @ 1mA
Gate Charge (Qg)7.8nC @ 10V, 8.4nC @ 10V
Input Capacitance (Ciss)320pF @ 10V, 365pF @ 10V
Power Dissipation (Max)2W (Ta)
Supplier Device PackageDFN3333-9DC
RoHSRoHS
Part StatusActive

Application & Notes

HS8MA2TCR1 by Rohm Semiconductor is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerWDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 80mOhm @ 5.5A, 10V, 35mOhm @ 7A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN and P-Channel
FET FeatureStandard
Power - Max2W (Ta)
Vgs(th) (Max) @ Id2.5V @ 1mA
Rds On (Max) @ Id, Vgs80mOhm @ 5.5A, 10V, 35mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs7.8nC @ 10V, 8.4nC @ 10V
Drain to Source Voltage (Vdss)30V
Input Capacitance (Ciss) (Max) @ Vds320pF @ 10V, 365pF @ 10V
Current - Continuous Drain (Id) @ 25°C5A (Ta), 7A (Ta)

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