HGT1S20N36G3VL
IGBT 395V 37.7A 150W TO262AA
Transistors Igbts Single
TO-262-3 Long Leads, I²Pak, TO-262AA
Obsolete
Price available on request
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | onsemi |
| Model | HGT1S20N36G3VL |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Power Dissipation (Max) | 150 W |
| Supplier Device Package | I2PAK (TO-262) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
HGT1S20N36G3VL by onsemi is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-262-3 Long Leads, I²Pak, TO-262AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for HGT1S20N36G3VL
Alternatives & Replacements
View All →HGT1S2N120CN
N-CHANNEL IGBT
IRGSL4062DPBF
IGBT W/ULTRAFAST SOFT RECOVERY D
IRG4BC40W-LPBF
IRG4BC40 - DISCRETE IGBT WITHOUT
HGT1S14N36G3VLT
N-CHANNEL IGBT
AUIRGSL4062D1
IGBT, 59A I(C), 600V V(BR)CES, N
IRGSL6B60KDPBF
IRGSL6B60 - DISCRETE IGBT WITH A
All Technical Specifications
| Input Type | Logic |
| Gate Charge | 28.7 nC |
| Power - Max | 150 W |
| Test Condition | 300V, 10A, 25Ohm, 5V |
| Td (on/off) @ 25°C | -/15µs |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 5V, 20A |
| Current - Collector (Ic) (Max) | 37.7 A |
| Voltage - Collector Emitter Breakdown (Max) | 395 V |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.