HGT1S14N36G3VLT
N-CHANNEL IGBT
Transistors Igbts Single
TO-262-3 Long Leads, I²Pak, TO-262AA
Obsolete
$1.54 / unit (market reference)
MOQ: 195 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | HGT1S14N36G3VLT |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Power Dissipation (Max) | 100 W |
| Supplier Device Package | I2PAK (TO-262) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
HGT1S14N36G3VLT by Rochester Electronics, LLC is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-262-3 Long Leads, I²Pak, TO-262AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for HGT1S14N36G3VLT
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All Technical Specifications
| Input Type | Logic |
| Gate Charge | 24 nC |
| Power - Max | 100 W |
| Test Condition | 300V, 7A, 25Ohm, 5V |
| Td (on/off) @ 25°C | -/7µs |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 5V, 14A |
| Current - Collector (Ic) (Max) | 18 A |
| Voltage - Collector Emitter Breakdown (Max) | 390 V |
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