Rochester Electronics, LLC4-DIP (0.400", 10.16mm)RoHS
H11A817BW
TRANSISTOR OUTPUT OPTOCOUPLER
Category
Subcategory
Optoisolators Transistor Photovoltaic Output
Package
4-DIP (0.400", 10.16mm)
Status
Obsolete
$0.06 / unit (market reference)
MOQ: 4808 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | H11A817BW |
| Package / Case | 4-DIP (0.400", 10.16mm) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 100°C |
| Supplier Device Package | 4-DIP |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
H11A817BW by Rochester Electronics, LLC is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 4-DIP (0.400", 10.16mm) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| Input Type | DC |
| Output Type | Transistor |
| Number of Channels | 1 |
| Voltage - Isolation | 5300Vrms |
| Vce Saturation (Max) | 200mV |
| Rise / Fall Time (Typ) | 2.4µs, 2.4µs |
| Voltage - Output (Max) | 70V |
| Current - Output / Channel | 50mA |
| Current Transfer Ratio (Max) | 260% @ 5mA |
| Current Transfer Ratio (Min) | 130% @ 5mA |
| Voltage - Forward (Vf) (Typ) | 1.2V |
| Current - DC Forward (If) (Max) | 50 mA |
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