onsemi6-DIP (0.300", 7.62mm)RoHS
H11A1M
OPTOISO 4.17KV TRANS W/BASE 6DIP
Category
Subcategory
Optoisolators Transistor Photovoltaic Output
Package
6-DIP (0.300", 7.62mm)
Status
Active
$0.76 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | onsemi |
| Model | H11A1M |
| Package / Case | 6-DIP (0.300", 7.62mm) |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 100°C |
| Supplier Device Package | 6-PDIP |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
H11A1M by onsemi is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-DIP (0.300", 7.62mm) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| Input Type | DC |
| Output Type | Transistor with Base |
| Number of Channels | 1 |
| Voltage - Isolation | 4170Vrms |
| Vce Saturation (Max) | 400mV |
| Voltage - Output (Max) | 30V |
| Current Transfer Ratio (Min) | 50% @ 10mA |
| Voltage - Forward (Vf) (Typ) | 1.18V |
| Turn On / Turn Off Time (Typ) | 2µs, 2µs |
| Current - DC Forward (If) (Max) | 60 mA |
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