SemiQTO-3P-3, SC-65-3RoHS
GPA060A060MN-FD
IGBT 600V 120A 347W TO3PN
Category
Subcategory
Transistors Igbts Single
Package
TO-3P-3, SC-65-3
Status
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | SemiQ |
| Model | GPA060A060MN-FD |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 347 W |
| Supplier Device Package | TO-3PN |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
GPA060A060MN-FD by SemiQ is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-3P-3, SC-65-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Gate Charge | 225 nC |
| Power - Max | 347 W |
| Test Condition | 400V, 60A, 10Ohm, 15V |
| Switching Energy | 2.66mJ (on), 1.53mJ (off) |
| Td (on/off) @ 25°C | 45ns/150ns |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 60A |
| Reverse Recovery Time (trr) | 140 ns |
| Current - Collector (Ic) (Max) | 120 A |
| Current - Collector Pulsed (Icm) | 180 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
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