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onsemiTO-3P-3, SC-65-3RoHS

SGH10N60RUFDTU

IGBT 600V 16A 75W TO3P

Subcategory

Transistors Igbts Single

Package

TO-3P-3, SC-65-3

Status

Not For New Designs

$2.65 / unit (market reference)

MOQ: 450 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
Brandonsemi
ModelSGH10N60RUFDTU
Package / CaseTO-3P-3, SC-65-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Power Dissipation (Max)75 W
Supplier Device PackageTO-3PN
RoHSRoHS
Part StatusNot For New Designs

Application & Notes

SGH10N60RUFDTU by onsemi is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-3P-3, SC-65-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

Input TypeStandard
Gate Charge30 nC
Power - Max75 W
Test Condition300V, 10A, 20Ohm, 15V
Switching Energy141µJ (on), 215µJ (off)
Td (on/off) @ 25°C15ns/36ns
Vce(on) (Max) @ Vge, Ic2.8V @ 15V, 10A
Reverse Recovery Time (trr)60 ns
Current - Collector (Ic) (Max)16 A
Current - Collector Pulsed (Icm)30 A
Voltage - Collector Emitter Breakdown (Max)600 V

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