GPA015A120MN-ND
IGBT 1200V 30A 212W TO3PN
Transistors Igbts Single
TO-3P-3, SC-65-3
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | SemiQ |
| Model | GPA015A120MN-ND |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 212 W |
| Supplier Device Package | TO-3PN |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
GPA015A120MN-ND by SemiQ is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-3P-3, SC-65-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for GPA015A120MN-ND
Alternatives & Replacements
View All →FGA20S120M
IGBT, 40A, 1200V, N-CHANNEL
SGH10N60RUFDTU
IGBT, 16A, 600V, N-CHANNEL
SGH40N60UFTU
IGBT 600V 40A TO3P
FGA25S125P
IGBT, 50A, 1250V, N-CHANNEL
FGA90N30DTU
IGBT, 90A, 300V, N-CHANNEL
FGA30T65SHD
IGBT TRENCH/FS 650V 60A TO3PN
All Technical Specifications
| IGBT Type | NPT and Trench |
| Input Type | Standard |
| Gate Charge | 210 nC |
| Power - Max | 212 W |
| Test Condition | 600V, 15A, 10Ohm, 15V |
| Switching Energy | 1.61mJ (on), 530µJ (off) |
| Td (on/off) @ 25°C | 25ns/166ns |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 15A |
| Reverse Recovery Time (trr) | 320 ns |
| Current - Collector (Ic) (Max) | 30 A |
| Current - Collector Pulsed (Icm) | 45 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
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