General ElectricModuleRoHS
GE17042BCA3
1700V 425A SIC DUAL MODULE
Category
Subcategory
Transistors Fets Mosfets Arrays
Package
Module
Status
Active
$2819.00 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | General Electric |
| Model | GE17042BCA3 |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Operating Temperature | 175°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 1700V (1.7kV) |
| Rds On (Max) | 4.45mOhm @ 425A, 20V |
| Vgs(th) (Max) | 4.5V @ 160mA |
| Gate Charge (Qg) | 18V |
| Input Capacitance (Ciss) | 29100pF @ 900V |
| Power Dissipation (Max) | 1250W |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
GE17042BCA3 by General Electric is an N-channel power MOSFET rated at 1700V (1.7kV) / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Module package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 4.45mOhm @ 425A, 20V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Silicon Carbide (SiC) |
| Power - Max | 1250W |
| Vgs(th) (Max) @ Id | 4.5V @ 160mA |
| Rds On (Max) @ Id, Vgs | 4.45mOhm @ 425A, 20V |
| Gate Charge (Qg) (Max) @ Vgs | 18V |
| Drain to Source Voltage (Vdss) | 1700V (1.7kV) |
| Input Capacitance (Ciss) (Max) @ Vds | 29100pF @ 900V |
| Current - Continuous Drain (Id) @ 25°C | 425A (Tc) |
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