General ElectricModuleRoHS
GE12047BCA3
1200V 475A SIC DUAL MODULE
Category
Subcategory
Transistors Fets Mosfets Arrays
Package
Module
Series
SiC Power
Status
Active
$1925.00 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | General Electric |
| Model | GE12047BCA3 |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (Tc) |
| FET Type | 2 Independent |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Rds On (Max) | 4.4mOhm @ 475A, 20V |
| Vgs(th) (Max) | 4.5V @ 160mA |
| Gate Charge (Qg) | 1248nC @ 18V |
| Input Capacitance (Ciss) | 29.3nF @ 600V |
| Power Dissipation (Max) | 1250W |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
GE12047BCA3 by General Electric is an N-channel power MOSFET rated at 1200V (1.2kV) / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Module package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 4.4mOhm @ 475A, 20V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | 2 Independent |
| FET Feature | Silicon Carbide (SiC) |
| Power - Max | 1250W |
| Vgs(th) (Max) @ Id | 4.5V @ 160mA |
| Rds On (Max) @ Id, Vgs | 4.4mOhm @ 475A, 20V |
| Gate Charge (Qg) (Max) @ Vgs | 1248nC @ 18V |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Input Capacitance (Ciss) (Max) @ Vds | 29.3nF @ 600V |
| Current - Continuous Drain (Id) @ 25°C | 475A |
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