GeneSiC SemiconductorTO-247-3RoHS
GA10JT12-247
TRANS SJT 1200V 10A TO247AB
Category
Subcategory
Transistors Fets Mosfets Single
Package
TO-247-3
Status
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | GeneSiC Semiconductor |
| Model | GA10JT12-247 |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Rds On (Max) | 140mOhm @ 10A |
| Power Dissipation (Max) | 170W (Tc) |
| Supplier Device Package | TO-247AB |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
GA10JT12-247 by GeneSiC Semiconductor is an N-channel power MOSFET rated at 1200 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 140mOhm @ 10A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 10A |
| Power Dissipation (Max) | 170W (Tc) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
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