GA04JT17-247
TRANS SJT 1700V 4A TO247AB
Transistors Fets Mosfets Single
TO-247-3
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | GeneSiC Semiconductor |
| Model | GA04JT17-247 |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Drain to Source Voltage (Vdss) | 1700 V |
| Rds On (Max) | 480mOhm @ 4A |
| Power Dissipation (Max) | 106W (Tc) |
| Supplier Device Package | TO-247AB |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
GA04JT17-247 by GeneSiC Semiconductor is an N-channel power MOSFET rated at 1700 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 480mOhm @ 4A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for GA04JT17-247
Alternatives & Replacements
View All →SPW11N60C3FKSA1
MOSFET N-CH 650V 11A TO247-3
HUFA75344G3
MOSFET N-CH 55V 75A TO247-3
IPW50R140CPFKSA1
MOSFET N-CH 550V 23A TO247-3
IRFP048NPBF
HEXFET POWER MOSFET
FCH077N65F-F085
POWER FIELD-EFFECT TRANSISTOR, N
FCH072N60F
MOSFET N-CH 600V 52A TO247-3
All Technical Specifications
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Rds On (Max) @ Id, Vgs | 480mOhm @ 4A |
| Power Dissipation (Max) | 106W (Tc) |
| Drain to Source Voltage (Vdss) | 1700 V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) (95°C) |
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