GeneSiC SemiconductorTO-247-3RoHS
G2R1000MT17D
SIC MOSFET N-CH 4A TO247-3
Category
Subcategory
Transistors Fets Mosfets Single
Package
TO-247-3
Series
G2R™
Status
Active
$5.15 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | GeneSiC Semiconductor |
| Model | G2R1000MT17D |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 1700 V |
| Rds On (Max) | 1.2Ohm @ 2A, 20V |
| Vgs(th) (Max) | 4V @ 2mA |
| Input Capacitance (Ciss) | 139 pF @ 1000 V |
| Power Dissipation (Max) | 53W (Tc) |
| Drive Voltage | 20V |
| Supplier Device Package | TO-247-3 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
G2R1000MT17D by GeneSiC Semiconductor is an N-channel power MOSFET rated at 1700 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 1.2Ohm @ 2A, 20V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | +20V, -5V |
| Technology | SiCFET (Silicon Carbide) |
| Vgs(th) (Max) @ Id | 4V @ 2mA |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2A, 20V |
| Power Dissipation (Max) | 53W (Tc) |
| Drain to Source Voltage (Vdss) | 1700 V |
| Input Capacitance (Ciss) (Max) @ Vds | 139 pF @ 1000 V |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
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