FQT4N20TF
MOSFET N-CH 200V 850MA SOT223-4
Transistors Fets Mosfets Single
TO-261-4, TO-261AA
Obsolete
$0.29 / unit (market reference)
MOQ: 1031 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | FQT4N20TF |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 200 V |
| Rds On (Max) | 1.4Ohm @ 425mA, 10V |
| Vgs(th) (Max) | 5V @ 250µA |
| Gate Charge (Qg) | 6.5 nC @ 10 V |
| Input Capacitance (Ciss) | 220 pF @ 25 V |
| Power Dissipation (Max) | 2.2W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | SOT-223-4 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
FQT4N20TF by Rochester Electronics, LLC is an N-channel power MOSFET rated at 200 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-261-4, TO-261AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 1.4Ohm @ 425mA, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for FQT4N20TF
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MOSFET N-CH 600V 120MA SOT223-4
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 425mA, 10V |
| Power Dissipation (Max) | 2.2W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 6.5 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 220 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 850mA (Tc) |
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