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onsemiTO-226-3, TO-92-3 (TO-226AA) Formed LeadsRoHS

FQN1N50CTA

MOSFET N-CH 500V 380MA TO92-3

FQN1N50CTA by onsemi
Subcategory

Transistors Fets Mosfets Single

Package

TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Series

QFET®

Status

Active

Datasheet

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$0.65 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
Brandonsemi
ModelFQN1N50CTA
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)500 V
Rds On (Max)6Ohm @ 190mA, 10V
Vgs(th) (Max)4V @ 250µA
Gate Charge (Qg)6.4 nC @ 10 V
Input Capacitance (Ciss)195 pF @ 25 V
Power Dissipation (Max)890mW (Ta), 2.08W (Tc)
Drive Voltage10V
Supplier Device PackageTO-92-3
RoHSRoHS
Part StatusActive

Application & Notes

FQN1N50CTA by onsemi is an N-channel power MOSFET rated at 500 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-226-3, TO-92-3 (TO-226AA) Formed Leads package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 6Ohm @ 190mA, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

📖 Technical Guides for FQN1N50CTA

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FQN1N60CTA

MOSFET N-CH 600V 300MA TO92-3

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MOSFET N-CH 450V 500MA TO92-3

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NTE Electronics, IncStockTO-226-3, TO-92-3 (TO-226AA) Formed Leads

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250µA
Rds On (Max) @ Id, Vgs6Ohm @ 190mA, 10V
Power Dissipation (Max)890mW (Ta), 2.08W (Tc)
Gate Charge (Qg) (Max) @ Vgs6.4 nC @ 10 V
Drain to Source Voltage (Vdss)500 V
Input Capacitance (Ciss) (Max) @ Vds195 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C380mA (Tc)

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