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Rochester Electronics, LLCTO-262-3 Long Leads, I²Pak, TO-262AARoHS

FQI4N20TU

MOSFET N-CH 200V 3.6A I2PAK

FQI4N20TU by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Single

Package

TO-262-3 Long Leads, I²Pak, TO-262AA

Series

QFET®

Status

Obsolete

Datasheet

View Datasheet ↗

$0.31 / unit (market reference)

MOQ: 962 pcs

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Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelFQI4N20TU
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)200 V
Rds On (Max)1.4Ohm @ 1.8A, 10V
Vgs(th) (Max)5V @ 250µA
Gate Charge (Qg)6.5 nC @ 10 V
Input Capacitance (Ciss)220 pF @ 25 V
Power Dissipation (Max)3.13W (Ta), 45W (Tc)
Drive Voltage10V
Supplier Device PackageI2PAK (TO-262)
RoHSRoHS
Part StatusObsolete

Application & Notes

FQI4N20TU by Rochester Electronics, LLC is an N-channel power MOSFET rated at 200 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-262-3 Long Leads, I²Pak, TO-262AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 1.4Ohm @ 1.8A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

📖 Technical Guides for FQI4N20TU

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MOSFET Alternatives: IRFZ44N, AO3400, IRF4905 & More — Cross Reference Guide

Components Guide

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Power Discrete Alternatives Guide: MOSFET, IGBT, SiC, GaN Cross-Reference

Components Guide

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id5V @ 250µA
Rds On (Max) @ Id, Vgs1.4Ohm @ 1.8A, 10V
Power Dissipation (Max)3.13W (Ta), 45W (Tc)
Gate Charge (Qg) (Max) @ Vgs6.5 nC @ 10 V
Drain to Source Voltage (Vdss)200 V
Input Capacitance (Ciss) (Max) @ Vds220 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C3.6A (Tc)

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