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Rochester Electronics, LLCTO-262-3 Long Leads, I²Pak, TO-262AARoHS

FQI27N25TU-F085

25.5A, 250V, 0.11OHM, N-CHANNEL

Subcategory

Transistors Fets Mosfets Single

Package

TO-262-3 Long Leads, I²Pak, TO-262AA

Series

Automotive, AEC-Q101

Status

Active

$1.84 / unit (market reference)

MOQ: 163 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelFQI27N25TU-F085
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)250 V
Rds On (Max)110mOhm @ 12.75A, 10V
Vgs(th) (Max)5V @ 250µA
Gate Charge (Qg)65 nC @ 10 V
Input Capacitance (Ciss)1800 pF @ 25 V
Power Dissipation (Max)3.13W (Ta), 417W (Tc)
Drive Voltage10V
Supplier Device PackageI2PAK (TO-262)
RoHSRoHS
Part StatusActive

Application & Notes

FQI27N25TU-F085 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 250 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-262-3 Long Leads, I²Pak, TO-262AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 110mOhm @ 12.75A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id5V @ 250µA
Rds On (Max) @ Id, Vgs110mOhm @ 12.75A, 10V
Power Dissipation (Max)3.13W (Ta), 417W (Tc)
Gate Charge (Qg) (Max) @ Vgs65 nC @ 10 V
Drain to Source Voltage (Vdss)250 V
Input Capacitance (Ciss) (Max) @ Vds1800 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C25.5A (Tc)

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