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Flip ElectronicsTO-263-3, D²Pak (2 Leads + Tab), TO-263ABRoHS

FQB27N25TM-F085P

250V, 26A, 108M, D2PAKN-CHANNEL

Subcategory

Transistors Fets Mosfets Single

Package

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Status

Active

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandFlip Electronics
ModelFQB27N25TM-F085P
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)250 V
Rds On (Max)131mOhm @ 25.5A, 10V
Vgs(th) (Max)5V @ 250µA
Gate Charge (Qg)49 nC @ 10 V
Input Capacitance (Ciss)1330 pF @ 25 V
Power Dissipation (Max)417W (Tj)
Drive Voltage10V
Supplier Device PackageTO-263 (D2PAK)
RoHSRoHS
Part StatusActive

Application & Notes

FQB27N25TM-F085P by Flip Electronics is an N-channel power MOSFET rated at 250 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 131mOhm @ 25.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id5V @ 250µA
Rds On (Max) @ Id, Vgs131mOhm @ 25.5A, 10V
Power Dissipation (Max)417W (Tj)
Gate Charge (Qg) (Max) @ Vgs49 nC @ 10 V
Drain to Source Voltage (Vdss)250 V
Input Capacitance (Ciss) (Max) @ Vds1330 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C25.5A (Tc)

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