IGBT MODULE 650V 40A 156W F2

Transistors Igbts Modules
Module
Obsolete
$105.40 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
| Parameter | Value |
|---|---|
| Brand | onsemi |
| Model | FPF2G120BF07AS |
| Package / Case | Module |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 156 W |
| Supplier Device Package | F2 |
| RoHS | RoHS |
| Part Status | Obsolete |
FPF2G120BF07AS by onsemi is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Module package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
IGBT MOD 1200V 170A 690W
IGBT MODULE 600V 65A 175W
IGBT MODULE 600V 20A 81W
IGBT MOD 1200V 320A 1100W
IGBT MOD 1200V 20A 145W
IGBT MOD 1200V 115A 460W
| Input | Standard |
| IGBT Type | Field Stop |
| Power - Max | 156 W |
| Configuration | 3 Independent |
| NTC Thermistor | Yes |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 40A |
| Current - Collector (Ic) (Max) | 40 A |
| Current - Collector Cutoff (Max) | 250 µA |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
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