FJB5555TM
POWER BIPOLAR TRANSISTOR, 5A, NP
Transistors Bipolar Bjt Single
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Active
$0.76 / unit (market reference)
MOQ: 393 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | FJB5555TM |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 1.6 W |
| Supplier Device Package | D2PAK (TO-263) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
FJB5555TM by Rochester Electronics, LLC is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for FJB5555TM
Alternatives & Replacements
View All →NJVMJB44H11T4G
POWER BIPOLAR TRANSISTOR, 10A, N
NJVMJB45H11T4G
TRANS PNP 80V 10A D2PAK
NJVMJB41CT4G
POWER BIPOLAR TRANSISTOR, 6A, 10
MJB41CT4G
TRANS NPN 100V 6A D2PAK
FJB3307DTM
POWER BIPOLAR TRANSISTOR
FJB102TM
TRANS NPN DARL 100V 8A TO263
All Technical Specifications
| Power - Max | 1.6 W |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1A, 3.5A |
| Current - Collector (Ic) (Max) | 5 A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 800mA, 3V |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
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