FJB3307DTM
POWER BIPOLAR TRANSISTOR
Transistors Bipolar Bjt Single
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Active
$0.40 / unit (market reference)
MOQ: 760 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | FJB3307DTM |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 1.72 W |
| Supplier Device Package | D²PAK |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
FJB3307DTM by Rochester Electronics, LLC is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for FJB3307DTM
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All Technical Specifications
| Power - Max | 1.72 W |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 2A, 8A |
| Current - Collector (Ic) (Max) | 8 A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 5 @ 5A, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
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