PC
Rochester Electronics, LLC4-XFBGA, WLCSPRoHS

FDZ451PZ

SMALL SIGNAL FIELD-EFFECT TRANSI

Subcategory

Transistors Fets Mosfets Single

Package

4-XFBGA, WLCSP

Series

PowerTrench®

Status

Active

$0.05 / unit (market reference)

MOQ: 5770 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

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Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelFDZ451PZ
Package / Case4-XFBGA, WLCSP
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeP-Channel
Drain to Source Voltage (Vdss)20 V
Rds On (Max)140mOhm @ 2A, 4.5V
Vgs(th) (Max)1.2V @ 250µA
Gate Charge (Qg)8.8 nC @ 4.5 V
Input Capacitance (Ciss)555 pF @ 10 V
Power Dissipation (Max)400mW (Ta)
Drive Voltage1.5V, 4.5V
Supplier Device Package4-WLCSP (0.8x0.8)
RoHSRoHS
Part StatusActive

Application & Notes

FDZ451PZ by Rochester Electronics, LLC is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 4-XFBGA, WLCSP package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 140mOhm @ 2A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeP-Channel
Vgs (Max)±8V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.2V @ 250µA
Rds On (Max) @ Id, Vgs140mOhm @ 2A, 4.5V
Power Dissipation (Max)400mW (Ta)
Gate Charge (Qg) (Max) @ Vgs8.8 nC @ 4.5 V
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds555 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C2.6A (Ta)

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