FDZ663P
FDZ663P - FDZ663P - MOSFET P-CHA
Transistors Fets Mosfets Single
4-XFBGA, WLCSP
PowerTrench®
Active
$0.27 / unit (market reference)
MOQ: 1110 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | FDZ663P |
| Package / Case | 4-XFBGA, WLCSP |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 20 V |
| Rds On (Max) | 134mOhm @ 2A, 4.5V |
| Vgs(th) (Max) | 1.2V @ 250µA |
| Gate Charge (Qg) | 8.2 nC @ 4.5 V |
| Input Capacitance (Ciss) | 525 pF @ 10 V |
| Power Dissipation (Max) | 1.3W (Ta) |
| Drive Voltage | 1.5V, 4.5V |
| Supplier Device Package | 4-WLCSP (0.8x0.8) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
FDZ663P by Rochester Electronics, LLC is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 4-XFBGA, WLCSP package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 134mOhm @ 2A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for FDZ663P
Alternatives & Replacements
View All →FDZ372NZ
MOSFET N-CH 20V 4.7A 4WLCSP
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PMCM4401UPEZ
MOSFET P-CH 20V 4A 4WLCSP
FDZ3N513ZT
MOSFET P-CH 30V 1.1A 4WLCSP
PMCM4402UPEZ
MOSFET P-CH 20V 4WLCSP
FDZ661PZ
MOSFET P-CH 20V 2.6A 4WLCSP
All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Rds On (Max) @ Id, Vgs | 134mOhm @ 2A, 4.5V |
| Power Dissipation (Max) | 1.3W (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 525 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Ta) |
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