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onsemiTO-261-4, TO-261AARoHS

FDT86246L

MOSFET N-CH 150V 2A SOT223-4

FDT86246L by onsemi
Subcategory

Transistors Fets Mosfets Single

Package

TO-261-4, TO-261AA

Series

PowerTrench®

Status

Active

Datasheet

View Datasheet ↗

$0.88 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
Brandonsemi
ModelFDT86246L
Package / CaseTO-261-4, TO-261AA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)150 V
Rds On (Max)228mOhm @ 2A, 10V
Vgs(th) (Max)2.5V @ 250µA
Gate Charge (Qg)6.3 nC @ 10 V
Input Capacitance (Ciss)335 pF @ 75 V
Power Dissipation (Max)1W (Ta)
Drive Voltage4.5V, 10V
Supplier Device PackageSOT-223-4
RoHSRoHS
Part StatusActive

Application & Notes

FDT86246L by onsemi is an N-channel power MOSFET rated at 150 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-261-4, TO-261AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 228mOhm @ 2A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

📖 Technical Guides for FDT86246L

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Power Discrete Alternatives Guide: MOSFET, IGBT, SiC, GaN Cross-Reference

Components Guide

Alternatives & Replacements

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Infineon TechnologiesStockTO-261-4, TO-261AA

BSP318SL6327HTSA1

MOSFET N-CH 60V 2.6A SOT223-4

Request QuoteRFQ →
NXP USA Inc.StockTO-261-4, TO-261AA

PMT760EN,115

MOSFET N-CH 100V 900MA SOT223

Request QuoteRFQ →
Infineon TechnologiesStockTO-261-4, TO-261AA

BSP135L6327HTSA1

MOSFET N-CH 600V 120MA SOT223-4

Request QuoteRFQ →
NXP USA Inc.StockTO-261-4, TO-261AA

PHT6N06LT,135

MOSFET N-CH 55V 2.5A SOT223

Request QuoteRFQ →
Infineon TechnologiesStockTO-261-4, TO-261AA

BSP125L6327HTSA1

MOSFET N-CH 600V 120MA SOT223-4

Request QuoteRFQ →
Infineon TechnologiesStockTO-261-4, TO-261AA

BSP135L6906HTSA1

MOSFET N-CH 600V 120MA SOT223-4

Request QuoteRFQ →

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA
Rds On (Max) @ Id, Vgs228mOhm @ 2A, 10V
Power Dissipation (Max)1W (Ta)
Gate Charge (Qg) (Max) @ Vgs6.3 nC @ 10 V
Drain to Source Voltage (Vdss)150 V
Input Capacitance (Ciss) (Max) @ Vds335 pF @ 75 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C2A (Ta)

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