PC
Rochester Electronics, LLC8-SOIC (0.154", 3.90mm Width)RoHS

FDS6986S

N-CHANNEL POWER MOSFET

FDS6986S by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Arrays

Package

8-SOIC (0.154", 3.90mm Width)

Series

PowerTrench®

Status

Active

$0.46 / unit (market reference)

MOQ: 656 pcs

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Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelFDS6986S
Package / Case8-SOIC (0.154", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET Type2 N-Channel (Dual)
Drain to Source Voltage (Vdss)30V
Rds On (Max)29mOhm @ 6.5A, 10V, 20mOhm @ 7.9A, 10V
Vgs(th) (Max)3V @ 250µA, 3V @ 1mA
Gate Charge (Qg)9nC @ 5V, 16nC @ 5V
Input Capacitance (Ciss)695pF @ 10V, 1233pF @ 10V
Power Dissipation (Max)900mW (Ta)
Supplier Device Package8-SOIC
RoHSRoHS
Part StatusActive

Application & Notes

FDS6986S by Rochester Electronics, LLC is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SOIC (0.154", 3.90mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 29mOhm @ 6.5A, 10V, 20mOhm @ 7.9A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Power - Max900mW (Ta)
Vgs(th) (Max) @ Id3V @ 250µA, 3V @ 1mA
Rds On (Max) @ Id, Vgs29mOhm @ 6.5A, 10V, 20mOhm @ 7.9A, 10V
Gate Charge (Qg) (Max) @ Vgs9nC @ 5V, 16nC @ 5V
Drain to Source Voltage (Vdss)30V
Input Capacitance (Ciss) (Max) @ Vds695pF @ 10V, 1233pF @ 10V
Current - Continuous Drain (Id) @ 25°C6.5A, 7.9A

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