FDS4501H
SMALL SIGNAL FIELD-EFFECT TRANSI
Transistors Fets Mosfets Arrays
8-SOIC (0.154", 3.90mm Width)
PowerTrench®
Active
$0.67 / unit (market reference)
MOQ: 450 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | FDS4501H |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N and P-Channel |
| Drain to Source Voltage (Vdss) | 30V, 20V |
| Rds On (Max) | 18mOhm @ 9.3A, 10V |
| Vgs(th) (Max) | 3V @ 250µA |
| Gate Charge (Qg) | 27nC @ 4.5V |
| Input Capacitance (Ciss) | 1958pF @ 10V |
| Power Dissipation (Max) | 1W |
| Supplier Device Package | 8-SOIC |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
FDS4501H by Rochester Electronics, LLC is an N-channel power MOSFET rated at 30V, 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SOIC (0.154", 3.90mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 18mOhm @ 9.3A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for FDS4501H
Alternatives & Replacements
View All →FDSS2407
POWER FIELD-EFFECT TRANSISTOR, 3
NDS9953A
P-CHANNEL POWER MOSFET
FDS6900S
N-CHANNEL POWER MOSFET
NTMD4840NR2G
MOSFET 2N-CH 30V 4.5A 8SOIC
DMP3085LSD-13
MOSFET 2P-CH 30V 3.9A 8SO
FW216A-TL-2W
MOSFET 2N-CH 35V 4.5A 8SOIC
All Technical Specifications
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Power - Max | 1W |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 9.3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 30V, 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1958pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 9.3A, 5.6A |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.