FDPC8014AS
25V ASYMMETRIC DUAL N-CHANNEL PO
Transistors Fets Mosfets Arrays
8-PowerWDFN
PowerTrench®
Active
$1.22 / unit (market reference)
MOQ: 246 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | FDPC8014AS |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) Asymmetrical |
| Drain to Source Voltage (Vdss) | 25V |
| Rds On (Max) | 3.8mOhm @ 20A, 10V |
| Vgs(th) (Max) | 2.5V @ 250µA |
| Gate Charge (Qg) | 35nC @ 10V |
| Input Capacitance (Ciss) | 2375pF @ 13V |
| Power Dissipation (Max) | 2.1W, 2.3W |
| Supplier Device Package | Power Clip 56 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
FDPC8014AS by Rochester Electronics, LLC is an N-channel power MOSFET rated at 25V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerWDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 3.8mOhm @ 20A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for FDPC8014AS
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) Asymmetrical |
| FET Feature | Standard |
| Power - Max | 2.1W, 2.3W |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 20A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
| Drain to Source Voltage (Vdss) | 25V |
| Input Capacitance (Ciss) (Max) @ Vds | 2375pF @ 13V |
| Current - Continuous Drain (Id) @ 25°C | 20A, 40A |
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