FDMS7606
SMALL SIGNAL N-CHANNEL MOSFET
Transistors Fets Mosfets Arrays
8-PowerWDFN
PowerTrench®
Obsolete
$0.90 / unit (market reference)
MOQ: 332 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | FDMS7606 |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 30V |
| Rds On (Max) | 11.4mOhm @ 11.5A, 10V |
| Vgs(th) (Max) | 3V @ 250µA |
| Gate Charge (Qg) | 22nC @ 10V |
| Input Capacitance (Ciss) | 1400pF @ 15V |
| Power Dissipation (Max) | 1W |
| Supplier Device Package | Power56 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
FDMS7606 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerWDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 11.4mOhm @ 11.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for FDMS7606
Alternatives & Replacements
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FDPC1012S
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SIZ270DT-T1-GE3
DUAL N-CHANNEL 100-V (D-S) MOSFE
All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Power - Max | 1W |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Rds On (Max) @ Id, Vgs | 11.4mOhm @ 11.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 11.5A, 12A |
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