onsemi8-PowerTDFNRoHS
FDMS3626S
MOSFET 2N-CH 25V 17.5/25A PWR56
Category
Subcategory
Transistors Fets Mosfets Arrays
Package
8-PowerTDFN
Series
PowerTrench®
Status
Obsolete
Datasheet
$1.35 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
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Parameters
| Parameter | Value |
|---|---|
| Brand | onsemi |
| Model | FDMS3626S |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) Asymmetrical |
| Drain to Source Voltage (Vdss) | 25V |
| Rds On (Max) | 5mOhm @ 17.5A, 10V |
| Vgs(th) (Max) | 2V @ 250µA |
| Gate Charge (Qg) | 26nC @ 10V |
| Input Capacitance (Ciss) | 1570pF @ 13V |
| Power Dissipation (Max) | 1W |
| Supplier Device Package | Power56 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
FDMS3626S by onsemi is an N-channel power MOSFET rated at 25V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerTDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 5mOhm @ 17.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for FDMS3626S
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) Asymmetrical |
| FET Feature | Logic Level Gate |
| Power - Max | 1W |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 17.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 26nC @ 10V |
| Drain to Source Voltage (Vdss) | 25V |
| Input Capacitance (Ciss) (Max) @ Vds | 1570pF @ 13V |
| Current - Continuous Drain (Id) @ 25°C | 17.5A, 25A |
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