onsemi8-PowerTDFNRoHS
NTMFD4C86NT3G
MOSFET 2N-CH 30V 11.3/18.1A 8DFN
Category
Subcategory
Transistors Fets Mosfets Arrays
Package
8-PowerTDFN
Status
Obsolete
Datasheet
$2.37 / unit (market reference)
MOQ: 127 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | onsemi |
| Model | NTMFD4C86NT3G |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) Asymmetrical |
| Drain to Source Voltage (Vdss) | 30V |
| Rds On (Max) | 5.4mOhm @ 30A, 10V |
| Vgs(th) (Max) | 2.2V @ 250µA |
| Gate Charge (Qg) | 22.2nC @ 10V |
| Input Capacitance (Ciss) | 1153pF @ 15V |
| Power Dissipation (Max) | 1.1W |
| Supplier Device Package | 8-DFN (5x6) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
NTMFD4C86NT3G by onsemi is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerTDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 5.4mOhm @ 30A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for NTMFD4C86NT3G
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) Asymmetrical |
| FET Feature | Standard |
| Power - Max | 1.1W |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Rds On (Max) @ Id, Vgs | 5.4mOhm @ 30A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 22.2nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1153pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 11.3A, 18.1A |
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