Rochester Electronics, LLC8-PowerTDFNRoHS
FDMS3606AS
SMALL SIGNAL FIELD-EFFECT TRANSI
Category
Subcategory
Transistors Fets Mosfets Arrays
Package
8-PowerTDFN
Series
PowerTrench®
Status
Active
Datasheet
$1.09 / unit (market reference)
MOQ: 275 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | FDMS3606AS |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) Asymmetrical |
| Drain to Source Voltage (Vdss) | 30V |
| Rds On (Max) | 8mOhm @ 13A, 10V |
| Vgs(th) (Max) | 2.7V @ 250µA |
| Gate Charge (Qg) | 29nC @ 10V |
| Input Capacitance (Ciss) | 1695pF @ 15V |
| Power Dissipation (Max) | 1W |
| Supplier Device Package | 8-PQFN (5x6) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
FDMS3606AS by Rochester Electronics, LLC is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerTDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 8mOhm @ 13A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for FDMS3606AS
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) Asymmetrical |
| FET Feature | Logic Level Gate |
| Power - Max | 1W |
| Vgs(th) (Max) @ Id | 2.7V @ 250µA |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 13A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1695pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 13A, 27A |
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